Infineon IPD95R750P7: A High-Performance 750V OptiMOS 5 Power Transistor for Demanding Switching Applications

The relentless pursuit of higher efficiency, power density, and reliability in power electronics drives the continuous innovation in semiconductor technology. Addressing these challenges, Infineon Technologies has introduced the IPD95R750P7, a 750V N-channel power MOSFET that stands as a pinnacle of performance within the esteemed OptiMOS™ 5 family. This device is engineered specifically for demanding switching applications, setting a new benchmark for designers.

At the heart of the IPD95R750P7's superiority is its exceptionally low figure-of-merit (R DS(on) x Q G). With a maximum drain-source on-state resistance of just 95mΩ and optimized gate charge, the transistor minimizes both conduction and switching losses. This dual reduction is critical for achieving high efficiency across a wide load range, leading to cooler operation and the potential for smaller heatsinks. The result is a significant boost in overall system efficiency and power density, a key requirement for modern power supplies.

The device's 750V voltage rating provides a robust safety margin for operations off universal input mains voltages (85V AC to 305V AC) and is particularly adept at handling harsh conditions. This high rating ensures enhanced resilience against voltage spikes and transients commonly encountered in industrial environments, making it an ideal choice for applications like server and telecom SMPS (Switch-Mode Power Supplies), solar inverters, and industrial motor drives.

Furthermore, the IPD95R750P7 is designed for superior switching performance and dv/dt controllability. Its optimized internal gate resistor ensures stable and predictable switching behavior, which simplifies gate driving circuit design and reduces the risk of electromagnetic interference (EMI). This allows engineers to meet stringent EMI standards without compromising on switching speed or system performance.

Housed in a TOLL (TO-leadless) package, the transistor offers a compact footprint and a low profile, which is essential for space-constrained applications. The package's excellent thermal characteristics, facilitated by an exposed cooling pad, ensure efficient heat dissipation away from the die, further supporting reliable operation at high power levels.

ICGOODFIND: The Infineon IPD95R750P7 is a top-tier power MOSFET that masterfully combines high voltage capability, ultra-low losses, and robust switching performance. It is an optimal solution for engineers designing high-efficiency, high-density power systems that must operate reliably under demanding conditions.

Keywords: High Efficiency, 750V Rating, OptiMOS™ 5, Low R DS(on), TOLL Package.