Intel TE28F160C3TD70 16 Megabit (2M x 8-Bit) CMOS Flash Memory Chip: Technical Overview and Legacy
The Intel TE28F160C3TD70 stands as a significant milestone in the evolution of non-volatile memory technology. As a 16-megabit (2M x 8-bit) CMOS Flash memory chip, it encapsulated the cutting-edge manufacturing and architectural principles of its era, powering a generation of computing and embedded devices. This device is more than a historical artifact; it represents a foundational technology that helped establish the ubiquity of flash memory.
Fabricated on Intel's advanced CMOS process, the TE28F160C3TD70 was designed for high-performance and low-power operation. Its core architecture is organized as 2,097,152 words of 8 bits each, a common configuration that simplified interface design with popular 8-bit microprocessors and microcontrollers. This made it an ideal solution for a wide array of applications, including firmware storage (BIOS chips), set-top boxes, networking hardware, and early consumer digital devices.
A key feature that distinguished this memory family was its use of a 12.0-volt VPP for accelerated programming. Unlike modern single-voltage chips, it utilized a dual-voltage scheme: a 5V VCC supply for read operations and a 12V VPP supply for erasing and programming. This allowed for significantly faster write times, a critical advantage during the manufacturing process where firmware needed to be loaded quickly. The chip supported a page-mode read operation, enhancing data transfer efficiency by allowing rapid sequential access within a selected "page" of memory.
The TE28F160C3TD70 was built around a command-driven interface, a precursor to the sophisticated protocols used today. To perform simple tasks like programming a byte or erasing a sector, the host system would write specific command sequences into the chip's internal register. This abstracted the complex internal high-voltage algorithms from the system designer, making the chip easier to implement. Its memory array was divided into multiple erase blocks, enabling flexible sector management where specific segments of code could be updated without affecting the entire chip.
The legacy of the Intel TE28F160C3TD70 is profound. It was part of the first generation of Flash memory to achieve widespread commercial adoption, moving the technology from laboratory curiosity to an essential component of the digital world. It helped cement Intel's leadership in the memory market for years and demonstrated the viability of in-system firmware updates, a concept that is now standard across virtually all electronic devices. While its capacity and dual-voltage requirement are obsolete by today's standards, studying its design provides invaluable insight into the engineering challenges and innovations that paved the way for the multi-level cell (MLC) and 3D NAND flash memory we rely on today.
ICGOOODFIND: The Intel TE28F160C3TD70 is a classic example of foundational memory technology. Its dual-voltage operation for fast programming, command-driven interface, and sector-erase architecture established design patterns that influenced subsequent memory products. For engineers and historians, it remains a crucial IC for understanding the evolution of solid-state storage, marking the transition from EPROM to a truly re-writable and non-volatile future.
Keywords: Flash Memory, CMOS Technology, Non-Volatile Memory, Sector Erase, Command Interface.
