High-Performance Isolated Gate Driver Solutions with the Infineon 2EDN8524F
The rapid evolution of power electronics across industries such as renewable energy, industrial automation, and electric vehicles demands gate drivers that offer not only robust performance but also high integration and reliability. Infineon’s 2EDN8524F dual-channel isolated gate driver stands out as a key enabler for next-generation power systems, combining high noise immunity, fast switching, and compact design.
One of the standout features of the 2EDN8524F is its reinforced galvanic isolation up to 5.7 kVrms, which ensures safe operation in high-voltage applications such as motor drives, solar inverters, and DC-DC converters. This isolation capability minimizes the risk of fault propagation and enhances system durability. Additionally, the driver supports peak output currents of up to 4 A, allowing it to efficiently control high-capacitance switches like SiC MOSFETs and IGBTs with minimal switching losses.
The device also integrates advanced protection features including under-voltage lockout (UVLO) for both primary and secondary sides, which prevents power device operation outside safe operating areas. Its short propagation delay of just 38 ns ensures precise timing control, critical for high-frequency switching topologies where efficiency and thermal performance are paramount.
Designed with flexibility in mind, the 2EDN8524F supports a wide supply voltage range and is available in a space-saving DSO-8 package, making it suitable for densely packed power modules. Its high common-mode transient immunity (CMTI) of >200 V/ns ensures stable performance even in noisy environments.
The Infineon 2EDN8524F sets a new benchmark in gate driver technology by delivering high noise immunity, robust isolation, and superior switching performance—essential for modern high-efficiency power systems.
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Keywords:
Isolated Gate Driver
High CMTI
Reinforced Isolation
SiC MOSFET
Dual-Channel
