Infineon IHW20N120R3: A High-Performance 1200V TRENCHSTOP™ IGBT3 Power Transistor
In the realm of power electronics, achieving an optimal balance between efficiency, ruggedness, and switching performance is a constant pursuit. The Infineon IHW20N120R3 stands as a prime example of this engineering excellence, representing a significant advancement in IGBT technology. As a 1200V member of the TRENCHSTOP™ IGBT3 family, this power transistor is engineered to meet the demanding requirements of modern high-power applications, including industrial motor drives, uninterruptible power supplies (UPS), solar inverters, and welding equipment.
The core of its superior performance lies in Infineon's advanced trench gate field-stop technology. This proprietary structure enables the device to achieve remarkably low saturation voltages (VCE(sat)), which directly translates into reduced conduction losses. Consequently, systems utilizing the IHW20N120R3 can operate at higher efficiencies, generating less waste heat and improving overall thermal management. This is crucial for enhancing the power density and reliability of end products.
Beyond efficiency, the IGBT3 technology is renowned for its excellent switching characteristics. The device offers soft and robust switching behavior, which minimizes electromagnetic interference (EMI) and reduces stress on other components within the circuit. This simplifies the design of filtering and snubber networks, leading to more compact and cost-effective solutions. Furthermore, the IHW20N120R3 features a positive temperature coefficient, which simplifies the paralleling of multiple devices for higher current capabilities without the risk of thermal runaway.
The robust design is complemented by a rugged and durable anti-parallel emitter-controlled diode. This integrated freewheeling diode is optimized for low reverse recovery charge, ensuring safe and reliable operation during inductive load switching and further contributing to the system's overall efficiency and longevity. The module is offered in the industry-standard TO-247 package, providing high power density and excellent thermal performance for demanding environments.
ICGOODFIND Summary: The Infineon IHW20N120R3 is a high-efficiency, robust 1200V IGBT that sets a benchmark for performance in power conversion systems. Its combination of low losses, excellent switching behavior, and built-in ruggedness makes it an outstanding choice for designers aiming to push the limits of efficiency and reliability in high-power applications.
Keywords: TRENCHSTOP™ IGBT3, Low Conduction Loss, High Power Density, Robust Switching, 1200V Transistor
