Infineon BSZ035N03LS: High-Efficiency 30V N-Channel MOSFET for Power Management Applications

The relentless pursuit of higher efficiency and power density in modern electronic systems places immense demands on power management components. At the heart of many advanced solutions lies the MOSFET, a critical switch enabling precise control of electrical power. The Infineon BSZ035N03LS stands out as a premier 30V N-Channel MOSFET engineered specifically to meet these challenges, offering an exceptional blend of low losses, robust performance, and compact form factor.

This MOSFET is built upon Infineon's advanced OptiMOS™ technology, a platform renowned for its superior switching performance and high efficiency. A key metric for power conversion efficiency is the RDS(on), or on-state resistance. The BSZ035N03LS boasts an impressively low maximum RDS(on) of just 3.5 mΩ at 10 V. This ultra-low resistance directly translates to minimized conduction losses, allowing the MOSFET to handle high continuous currents (up to 35 A) with reduced heat generation. This is paramount for applications like voltage regulation modules (VRMs) and DC-DC converters, where every milliohm saved contributes to higher overall system efficiency and thermal manageability.

Beyond its static performance, the device excels in dynamic operation. Its low gate charge (Qg typical 15 nC) and figures of merit ensure fast and smooth switching characteristics. This reduces switching losses, which are a dominant factor in high-frequency circuits. Designers can leverage this to push switching frequencies higher, enabling the use of smaller passive components like inductors and capacitors, thereby increasing power density. The 30V drain-source voltage rating makes it an ideal candidate for a wide range of low-voltage power management applications, including:

Synchronous rectification in switch-mode power supplies (SMPS).

Load switch and power distribution circuits in computing and server motherboards.

Motor control and drive systems in consumer and industrial automation.

DC-DC conversion in telecom, networking, and automotive systems.

Housed in a space-saving PG-TSDSON-8 (3.3x3.3mm) package, the BSZ035N03LS is designed for automated assembly processes and offers an excellent thermal footprint, further aiding in heat dissipation in space-constrained designs.

ICGOOODFIND: The Infineon BSZ035N03LS is a high-performance N-Channel MOSFET that sets a high bar for efficiency in low-voltage power management. Its industry-leading low RDS(on) and exceptional switching performance, delivered through proven OptiMOS™ technology, make it a superior choice for designers aiming to maximize efficiency, reduce system size, and improve thermal performance in demanding applications.

Keywords: Low RDS(on), OptiMOS™ Technology, Power Management, Synchronous Rectification, High Efficiency.