Infineon BSC080P03LSGAUMA1: A High-Performance 30V OptiMOS Power MOSFET

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. Addressing this need, Infineon Technologies has engineered the BSC080P03LSGAUMA1, a 30V N-channel OptiMOS power MOSFET that sets a new benchmark for performance in a compact package. This device is specifically designed to minimize power losses and maximize thermal efficiency, making it an ideal solution for a wide array of demanding applications.

A key highlight of this MOSFET is its exceptionally low on-state resistance (RDS(on)) of just 0.8 mΩ (max. at VGS = 10 V). This ultra-low resistance is paramount in reducing conduction losses, which directly translates to higher system efficiency and less wasted energy in the form of heat. Furthermore, the device features outstanding switching characteristics, thanks to its low gate charge (Qg) and figure of merit (FOM). This enables faster switching speeds, which is crucial for high-frequency operation in switch-mode power supplies (SMPS), leading to smaller and lighter magnetic components and overall more compact designs.

The BSC080P03LSGAUMA1 is housed in an advanced, space-saving PG-TSDSON-8 (SuperSO8) package. This innovative packaging technology offers a significantly reduced footprint compared to standard SO-8 packages while providing superior thermal performance. The exposed die pad allows for efficient heat dissipation directly from the silicon to the PCB, enabling higher power handling capability and improved long-term reliability. This combination of low RDS(on) and excellent thermal properties makes it exceptionally robust for high-current applications.

Typical applications where this MOSFET excels include:

Synchronous rectification in server and telecom power supplies (SMPS).

High-current motor control and drives in industrial automation and robotics.

Load switch and battery management systems (BMS) in consumer electronics and power tools.

DC-DC conversion stages in computing and automotive systems.

In conclusion, the Infineon BSC080P03LSGAUMA1 represents a superior blend of ultra-low conduction loss, fast switching speed, and robust thermal performance. It empowers designers to push the boundaries of efficiency and power density in their next-generation projects.

ICGOODFIND: This component is a top-tier choice for engineers prioritizing maximum efficiency and power density, particularly in space-constrained, high-current applications like server PSUs and motor drives.

Keywords: Low RDS(on), High Efficiency, OptiMOS, Power MOSFET, Thermal Performance.