Infineon BFR380L3E6327: High-Performance NPN Silicon RF Transistor for Low-Noise Amplifier Applications

The relentless drive for faster, more reliable wireless communication places immense demands on the RF front-end components of modern electronics. At the heart of many high-frequency systems, particularly in the critical first stage of a receiver chain, lies the low-noise amplifier (LNA). Its primary role is to amplify extremely weak signals captured by an antenna while adding the absolute minimum amount of noise. The Infineon BFR380L3E6327 stands out as a premier NPN silicon RF transistor engineered specifically to excel in these demanding LNA applications, offering a blend of ultra-low noise and high gain performance.

This transistor is fabricated using Infineon's advanced silicon germanium carbon (SiGe:C) technology. This process is pivotal to its exceptional characteristics, enabling superior high-frequency performance that rivals more expensive Gallium Arsenide (GaAs) solutions while retaining the cost-effectiveness and robustness of silicon. The BFR380L3E6327 is characterized by an ultra-low noise figure (NF), typically just 0.9 dB at 1.8 GHz, which is crucial for preserving signal integrity. Alongside its low-noise capabilities, it delivers high gain, with a typical |S21|² of 19 dB at the same frequency, ensuring effective signal amplification.

Housed in a lead-free, ultra-miniature SOT-343 (SC-70) surface-mount device (SMD) package, the BFR380L3E6327 is designed for high-density PCB designs and automated assembly processes. This makes it an ideal choice for space-constrained applications. Its excellent linearity and low current consumption further enhance its appeal, contributing to lower overall system power budgets and reduced intermodulation distortion.

Typical applications for the BFR380L3E6327 are extensive and critical to modern connectivity. It is perfectly suited for use in:

Cellular infrastructure such as base stations and repeaters.

ISM band applications and professional mobile radio.

GPS and satellite communication systems.

VCO buffer stages and other general-purpose RF amplification needs.

ICGOOFind: The Infineon BFR380L3E6327 is a top-tier NPN RF transistor that sets a high standard for low-noise amplifier design. Its combination of an ultra-low noise figure, high associated gain, and the economic advantages of silicon technology makes it a compelling component for designers aiming to maximize receiver sensitivity and performance in a compact form factor across a wide range of wireless applications.

Keywords: Low-Noise Amplifier (LNA), RF Transistor, Silicon Germanium Carbon (SiGe:C), Noise Figure, SMD Package.