Intel RC28F128J3D75: A Comprehensive Technical Overview of the 128-Megabit Flash Memory Device

The Intel RC28F128J3D75 represents a significant milestone in the evolution of non-volatile memory technology. As a 128-megabit (16MB) flash memory device fabricated on advanced CMOS process technology, it was engineered to deliver reliable, high-performance storage for a wide array of applications, from embedded systems and networking hardware to industrial controllers and telecommunications infrastructure.

Constructed using Intel's renowned Multi-Level Cell (MLC) technology, this device effectively doubles the density compared to single-level cell counterparts by storing two bits of data per memory cell. This architecture allows for a more cost-effective solution per megabit, making it a compelling choice for designs requiring a balance of capacity, performance, and price. The chip is organized as 16 megabits x 8, 8 megabits x 16, or 32 megabits x 4, providing designers with flexible data bus configurations to suit different system architectures.

A key feature of the RC28F128J3D75 is its 75ns maximum random access time, which ensures swift read operations critical for system responsiveness. For write and erase operations, it employs a 12.0V VPP voltage for programming, which enables faster sector erase and byte programming times. The device is partitioned into 128 uniform 64-Kbyte sectors, each of which can be individually erased, locked, or unlocked. This granular sector architecture is vital for efficient memory management, allowing for the storage of multiple application modules or data sets without affecting the entire array.

The device supports a Common Flash Memory Interface (CFI), which provides a standardized method for system software to query the flash device and automatically configure itself for optimal performance. This simplifies driver development and enhances interoperability. Furthermore, it incorporates advanced hardware and software data protection mechanisms. Features like absolute hardware protection during power transitions and a command-driven lockout scheme prevent accidental corruption of stored data, a critical requirement for mission-critical systems.

Operating on a single 3.3V VCC supply for read, erase, and program operations (with a separate 12V VPP for accelerated programming), it is designed for power efficiency. The package is a standard 56-Lead TSOP (Thin Small Outline Package), which is widely used and facilitates easy integration onto printed circuit boards.

In summary, the Intel RC28F128J3D75 stands as a robust and versatile solution for demanding storage needs. Its combination of high density, flexible architecture, fast access times, and comprehensive data protection solidified its position as a trusted component in the electronics industry.

ICGOOODFIND: This memory device is a quintessential example of Intel's innovation in flash memory, offering a reliable and high-performance 128Mb solution with advanced sector protection and configuration flexibility, making it ideal for complex embedded systems.

Keywords:

1. Non-Volatile Memory

2. Multi-Level Cell (MLC)

3. Sector Erase Architecture

4. Common Flash Interface (CFI)

5. Hardware Data Protection